transistor(npn) features z complementary to mmbt5401 z ideal for medium power amplification and switching marking: g1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current 600 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a, i e =0 180 v collector-emitter breakdown voltage v (br)ceo * i c =1ma, i b =0 160 v emitter-base breakdown voltage v (br)ebo i e =10a, i c =0 6 v collector cut-off current i cbo v cb =120v, i e =0 50 na emitter cut-off current i ebo v eb =4v, i c =0 50 na h fe(1) * v ce =5v, i c =1ma 80 h fe(2) * v ce =5v, i c =10ma 100 300 dc current gain h fe(3) * v ce =5v, i c =50ma 50 v ce(sat)1 * i c =10ma, i b =1ma 0.15 v collector-emitter saturation voltage v ce(sat)2 * i c =50ma, i b =5ma 0.2 v v be(sat)1 * i c =10ma, i b =1ma 1 v base-emitter saturation voltage v be(sat)2 * i c =50ma, i b =5ma 1 v transition frequency f t v ce =10v,i c =10ma, f=100mhz 100 300 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 6 pf *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe (2) rank l h range 100-200 200-300 sot C 23 1. base 2. emitter 3. collector MMBT5551 1 date:2011/05 www.htsemi.com semiconductor jinyu
0.1 1 10 1 10 100 0.2 0.4 0.6 0.8 1.0 1 10 100 11 0 100 11 01 0 0 10 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 024681 01 2 0 3 6 9 12 15 18 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 11 01 0 0 0.01 0.1 f=1mhz i e =0 / i c =0 t a =25 capacitance c (pf) reverse voltage v (v) c ob c ib c ob / c ib ?? v cb / v eb v be ?? i c collector current i c (ma) base-emitter voltage v be (v) t a =25 t a =100 v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) i c f t ?? common emitter v ce =5v collector current i c (ma) dc current gain h fe t a =25 t a =100 common emitter v ce =5v i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a common emitter t a =25 40ua 50ua 70ua 90ua 80ua 60ua 30ua i b =20ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic =10 t a =100 t a =25 collector current i c (ma) base-emitter saturation voltage v besat (v) i c v besat ?? 0.3 200 200 200 3 150 50 30 20 20 200 500 collector current i c (ma) =10 collector-emitter saturation voltage v cesat (v) t a =25 t a =100 v cesat ?? i c MMBT5551 2 date:2011/05 www.htsemi.com semiconductor jinyu
|
